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| PD - 9.1409A IRFP048N HEXFET(R) Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.016 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercialindustrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole. ID = 64A TO-247AC Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. 64 45 210 140 0.90 20 270 32 14 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ. --- 0.24 --- Max. 1.1 --- 40 Units C/W 8/25/97 IRFP048N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS I GSS Qg Q gs Q gd t d(on) tr t d(off) tf LD LS Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 22 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.052 --- --- --- --- --- --- --- --- --- --- 11 78 32 48 5.0 13 1900 620 270 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, I D = 1mA 0.016 VGS = 10V, ID = 37A 4.0 V VDS = VGS , ID = 250A --- S VDS = 25V, I D = 32A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VGS = 0V, TJ = 150C 100 V GS = 20V nA -100 VGS = -20V 89 ID = 32A 20 nC VDS = 44V 39 V GS = 10V, See Fig. 6 and 13 --- VDD = 28V --- I D = 32A ns --- RG = 5.1 --- RD = 0.85, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 94 360 45 A 210 1.3 140 540 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 37A, VGS = 0V TJ = 25C, IF = 32A di/dt = 100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Uses IRFZ48N data and test conditions VDD = 25V, starting TJ = 25C, L = 530H RG = 25, IAS = 32A. (See Figure 12) ISD 32A, di/dt 250A/s, VDD V(BR)DSS, TJ 175C IRFP048N 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP 1000 I , D ra in -to -S o u rce C u rre n t (A ) D 100 I , D ra in -to -S o u rc e C u rre n t (A ) D 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTT OM 4.5V TOP 10 10 4.5 V 1 1 4 .5V 0.1 0.1 1 2 0 s PU LSE W ID TH TC = 2 5C 10 A 0.1 0.1 1 20 s P UL SE W IDTH TC = 17 5C 10 100 100 A V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000 2.5 R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce (N o rm a li ze d ) I D = 53 A I D , D r ain- to-S ourc e C urre nt (A ) 2.0 100 TJ = 1 7 5 C 10 1.5 TJ = 2 5 C 1.0 1 0.5 0.1 4 5 6 7 V DS = 2 5 V 2 0 s P U L SE W ID TH 8 9 10 A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature IRFP048N 4000 C , C a p a c ita n c e (p F ) 3000 C is s 2000 C os s V G S , G a te -to -S o u rc e V o lta g e (V ) V GS C is s C rs s C o ss = 0 V, f = 1M H z = C gs + C gd , Cds SH O RTE D = C gd = C ds + C g d 20 I D = 3 2A V DS= 4 4V V DS= 2 8V 16 12 8 1000 C rs s 4 0 1 10 100 A 0 0 20 40 FO R TES T C IR CU IT SEE FIG U R E 13 60 80 100 A V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 I S D , R e v e rse D ra in C u rre n t (A ) O PER ATIO N IN T HIS AR EA LIMITE D BY R DS (on) 100 I D , D ra in C u rre n t (A ) TJ = 1 75 C 10 100 10 s TJ = 2 5C 1 00s 10 1 ms 1 10m s 0.1 0.2 0.6 1.0 1.4 1.8 VG S = 0 V 2.2 A 1 1 T C = 25 C T J = 17 5C S in gle Pu lse 10 100 2.6 A V S D , S ource-to-Drain Voltage (V ) V D S , D rain-to-S ource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area IRFP048N 70 VDS 60 RD VGS RG D.U.T. + I D , Drain Current (A) 50 - VDD 40 10V Pulse Width 1 s Duty Factor 0.1 % 30 20 Fig 10a. Switching Time Test Circuit VDS 90% 10 0 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10b. Switching Time Waveforms 10 (Z thJC ) Thermal Response 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case IRFP048N 700 E A S , S in g le P u ls e A va la n c h e E n e rg y (m J) TO P 600 15 V B OTTO M 500 ID 13 A 2 2A 32 A VDS L D R IV E R 400 RG 20V tp D .U .T IA S 0 .0 1 + V - DD 300 A 200 Fig 12a. Unclamped Inductive Test Circuit 100 0 25 VD D = 2 5V 50 75 100 125 150 A 175 V (BR )D SS tp Starting T J , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K QG 12V .2F .3F 10 V QGS VG QGD VGS 3mA D.U.T. + V - DS Charge IG ID Current Sampling Resistors Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit IRFP048N Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS IRFP048N Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 1 5 .90 (.6 2 6) 1 5 .30 (.6 0 2) -B3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .25 (.0 1 0) M -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.80 0 ) 1 9 .7 0 (.77 5 ) 1 2 3 -C 1 4.8 0 (.5 8 3 ) 1 4.2 0 (.5 5 9 ) 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) LEAD AS SIGN MENT S 1 2 3 4 G ATE DRAIN SO URCE DRAIN -DDBM 5 .3 0 (.2 0 9 ) 4 .7 0 (.1 8 5 ) 2 .5 0 (.0 8 9) 1 .5 0 (.0 5 9) 4 2X 5. 50 (.2 17 ) 4. 50 (.1 77 ) NOT ES : 1 DIME NSIO NING & TO LERAN CING PE R AN SI Y 14.5M, 1982. 2 CO NTRO LLING DIMENS IO N : IN CH . 3 CO NF ORM S T O JEDE C O UTLINE T O-247-A C. 2 .4 0 (.09 4 ) 2 .0 0 (.07 9 ) 2X 5 .45 (.2 1 5) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .25 (.0 10 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) C AS 0 .8 0 (. 03 1 ) 3 X 0 .4 0 (. 01 6 ) 2.6 0 (.10 2 ) 2.2 0 (.08 7 ) Part Marking Information TO-247AC E X AM PLE : T HI S IS A N IRF 1010 E XAM P L E IT H HA S S E MB LY F PE 30 W : T IS IS AN IR LO T W IT H AS9B 1M Y CO DE SE M BL LOT C ODE 3A 1Q A A IN TE R NA T ION A L IN TE R N A TIO N A L R EC T IF IER R E C T IF IE R LOG O L O GO A S S EM A SSE M BL Y B LY L O T T O D E DE LO C CO P AR TRT UNU M BE R P A N M B ER IR FP E3 0 IR F 1010 9246 3A 1 Q 9 31M 02 9B D A TE C O D E (Y YW W ) (YYW W ) Y Y = YE A R YY = YE AR =K WW WW EE W E EK W D A TE C OD E WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/97 |
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